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Stmicroelectronics And Leti Cooperate In Developing Power Conversion Technology For Silicon Based Gallium NitrideSource：laoyaoba Release Date：2018/9/29 Click On：4650Leti, A Research Institute of ST and CEA Tech, announced a collaborative effort to develop silicon-based GaN power switching module manufacturing technology. The silicon-based GaN power technology will enable Italian Semiconductors to meet high-performance, high-power applications, including hybrid and electric vehicle chargers, wireless charging and servers.
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Qorvo New Silicon Carbide-based Gallium Nitride Amplifier Can Further Reduce The Cost Of Telecommunications InfrastructureSource：Qorvo Release Date：2017/8/11 Click On：4260Qorvo, Inc., a provider of innovative RF solutions for the interconnected world, today announced the availability of a new asymmetric Doherty amplifier, the QPD2731, to help customers achieve ultra-high efficiency in designing wireless base station equipment.
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